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STS1C1S250
N-CHANNEL 250V - 0.9 - 0.75A SO-8 P-CHANNEL 250V - 2.1 - 0.6A SO-8 MESH OVERLAY POWER MOSFET
TYPE STS1C1S250(N-Channel) STS1C1S250(P-Channel)
s s s s
VDSS 250 V 250 V
RDS(on) <1.4 <2.8
ID 0.80 A 0.60 A
TYPICAL RDS(on) (N-Channel) = 0.9 TYPICAL RDS(on) (P-Channel) = 2.1 GATE-SOURCE ZENER DIODE STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY
SO-8
DESCRIPTION This complementary pair uses the Company's proprietary high voltage MESH OVERLAYTM process based on advanced strip layout and efficient edge termination. Designed for high volume manufacturing capability, it is ideal in lighting converters such as CFL supplied from 120V mains.
INTERNAL SCHEMATIC DIAGRAM
s
APPLICATIONS LIGHTING
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (1) PTOT Tstg Tj October 2003 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Single Operation Total Dissipation at TC = 25C Dual Operation Storage Temperature Max. Operating Junction Temperature 0.75 0.47 3 1.6 2 -65 to 150 150 250 250 25 0.60 0.38 2.4 Value N-CHANNEL P-CHANNEL 250 250 V V V A A A W C C 1/10 Unit
(1)Pulse width limited by safe operating area
STS1C1S250
THERMAL DATA
Rthj-amb (2) Thermal Resistance Junction-ambient Max (Single Operating) (Dual Operating)
(2) Mounted on 0.5 in pad of 2oz. copper.
62.5 78
C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF
Symbol V(BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions N-CHANNEL ID = 250 A, VGS = 0 P-CHANNEL ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C n-ch p-ch n-ch p-ch n-ch p-ch n-ch p-ch Min. 250 250 1 1 10 10 10 10 Typ. Max. Unit V V A A A A A A
IDSS
Zero Gate Voltage Drain Current (VGS = 0)
IGSS
Gate-body Leakage Current (VDS = 0)
VGS = 20V
ON (1)
Symbol VGS(th) Parameter Gate Threshold Voltage Test Conditions N-CHANNEL VDS = VGS, ID = 250A P-CHANNEL VDS = VGS, ID = 250A N-CHANNEL VGS = 10V, ID = 0.40A P-CHANNEL VGS = 10V, ID = 0.30A n-ch p-ch n-ch p-ch Min. 2 2 Typ. 3 3 0.9 2.1 Max. 4 4 1.4 2.8 Unit V V
RDS(on)
Static Drain-source On Resistance
DYNAMIC
Symbol Ciss Coss Crss Rg Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Input Resistance f=1 MHz Gate DC Bias=0 Test Signal Level=20mV Open Drain Test Conditions N-CHANNEL VDS = 25V, f = 1 MHz, VGS = 0 P-CHANNEL VDS = 25V, f = 1 MHz, VGS = 0 n-ch p-ch n-ch p-ch n-ch p-ch n-ch p-ch Min. Typ. 325 260 51 52 24 25.5 6 6 Max. Unit pF pF pF pF pF pF
(3) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
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STS1C1S250
ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON
Symbol td(on) Parameter Turn-on Delay Time Test Conditions N-CHANNEL VDD = 125V, ID = 1.5A RG = 4.7 VGS = 10V P-CHANNEL VDD = 125V, ID = 1.5A RG = 4.7 VGS = 10V (Resistive, see Figure 3) N-CHANNEL VDD =200V, ID=1.5A, VGS = 10V P-CHANNEL VDD = 200V, ID= 1.5A, VGS = 10V n-ch p-ch Min. Typ. 9 12 Max. Unit ns ns
tr
Rise Time
n-ch p-ch n-ch p-ch n-ch p-ch n-ch p-ch
11 22 15 16 1.9 1.4 7 7.6 20 21
ns ns nC nC nC nC nC nC
Qg Qgs Qgd
Total Gate Charge Gate-Source Charge Gate-Drain Charge
SWITCHING OFF
Symbol td(off) Parameter Turn-off Delay Time Test Conditions N-CHANNEL VDD = 125V, ID = 1.5A, RG = 4.7, VGS = 10V P-CHANNEL VDD = 200V, ID = 1.5A, RG = 4.7, VGS = 10V (see test circuit, Figure 5) Test Conditions n-ch p-ch n-ch p-ch ISD = 3A, VGS = 0 ISD = 3A, VGS = 0 N-CHANNEL ISD = 0.8A, di/dt = 100A/s, VDD = 50V, Tj = 150C P-CHANNEL ISD = 0.60A, di/dt = 100A/s, VDD = 40V, Tj = 150C (see test circuit, Figure 5) Test Conditions Igs= 500 A (Open Drain) n-ch p-ch n-ch p-ch n-ch p-ch n-ch p-ch 127 143 450 806 7 11 n-ch p-ch n-ch p-ch Min. Typ. 31 29.5 11 7 Max. Unit ns ns ns ns
tf
Fall Time
SOURCE DRAIN DIODE
Symbol ISD ISDM (4) VSD (5) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Curren Min. Typ. Max. 0.75 0.6 3 2.4 1.5 1.5 Unit A A A A V V ns ns nC nC A A
GATE-SOURCE ZENER DIODE
Symbol BVGSO Parameter Gate-Source Breakdown Voltage Min. 25 Typ. Max. Unit V
(4) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (5) Pulse width limited by safe operating area
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
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STS1C1S250
Safe Operating Area n-ch Thermal Impedance for Complementary pair
Output Characteristics n-ch
Transfer Characteristics n-ch
Transconductance n-ch
Static Drain-source On Resistance n-ch
4/10
STS1C1S250
Gate Charge vs Gate-source Voltage n-ch Capacitance Variations n-ch
Norm. Gate Thereshold Voltage vs Temp n-ch
Norm. On Resistance vs Temperature n-ch
Source-drainDiodeForwardCharacteristicsn-ch
Normalized BVDSS vs Temperature n-ch
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STS1C1S250
Safe Operating Area p-ch Thermal Impedance for Complementary pair
Output Characteristics p-ch
Transfer Characteristics p-ch
Transconductance p-ch
Static Drain-source On Resistance p-ch
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STS1C1S250
Gate Charge vs Gate-source Voltage p-ch Capacitance Variations p-ch
Norm. Gate Thereshold Voltage vs Temp p-ch
NormalizedOnResistancevsTemperaturep-ch
Source-drainDiodeForwardCharacteristicsp-ch
Normalized BVDSS vs Temperature p-ch
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STS1C1S250
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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STS1C1S250
SO-8 MECHANICAL DATA
DIM. MIN. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019
0016023
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STS1C1S250
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com
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